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IPP80N04S2H4AKSA2

IPP80N04S2H4AKSA2

MOSFET N-CH 40V 80A TO220-3

IPP80N04S2H4AKSA2

IPP80N04S2H4AKSA2

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Part No :

IPP80N04S2H4AKSA2

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 40V 80A TO220-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
33500 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 15 - Nov 19 2024
Type Description
Series:OptiMOS™
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:148 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4.4 pF @ 25 V
FET Feature:-
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3-1
Package / Case:TO-220-3
IPP80N04S2H4AKSA2 is available at GangBo-ic.com, Please review product page below for detailed information, including IPP80N04S2H4AKSA2 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPP80N04S2H4AKSA2 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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