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IRFS59N10DTRLP

IRFS59N10DTRLP

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IRFS59N10DTRLP

IRFS59N10DTRLP

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Part No :

IRFS59N10DTRLP

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 100V 59A TO263-3-2
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10590 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 28 - Dec 02 2024
PDF
IRFS59N10DTRLP PDF
Type Description
Series:HEXFET®
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:59A (Tc)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:25mOhm @ 35.4A, 10V
Vgs(th) (Max) @ Id:5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:114 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:2450 pF @ 25 V
FET Feature:-
Power Dissipation (Max):3.8W (Ta), 200W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3-2
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRFS59N10DTRLP is available at GangBo-ic.com, Please review product page below for detailed information, including IRFS59N10DTRLP price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRFS59N10DTRLP to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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