MOSFET N-CH 200V 14.5A TO262-3
Type | Description |
---|---|
Series: | SIPMOS® |
Package: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 200 V |
Current - Continuous Drain (Id) @ 25°C: | 14.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 5V |
Rds On (Max) @ Id, Vgs: | 200mOhm @ 9A, 5V |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | - |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1.12 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 95W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | PG-TO262-3-1 |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SI1427EDH-T1-BE3Vishay / Siliconix |
MOSFET P-CH 20V 2A/2A SC70-6 |
|
IPD50R500CEBTMA1Rochester Electronics |
COOLMOS N-CHANNEL POWER MOSFET |
|
CSD13202Q2Texas Instruments |
MOSFET N-CH 12V 22A 6WSON |
|
DMN6040SSS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 5.5A 8SO |
|
STU2N95K5STMicroelectronics |
MOSFET N-CH 950V 2A IPAK |
|
IRF730STRLPBFVishay / Siliconix |
MOSFET N-CH 400V 5.5A D2PAK |
|
BUK761R8-30C,118Rochester Electronics |
MOSFET N-CH 30V 100A D2PAK |
|
2V7002KT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 320MA SOT23 |
|
SIS176LDN-T1-GE3Vishay / Siliconix |
N-CHANNEL 70 V (D-S) MOSFET POWE |
|
TSM3481CX6 RFGTSC (Taiwan Semiconductor) |
MOSFET P-CHANNEL 30V 5.7A SOT26 |
|
HUFA75645P3Rochester Electronics |
MOSFET N-CH 100V 75A TO220-3 |
|
IPI50R250CPRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IXTQ52N30PWickmann / Littelfuse |
MOSFET N-CH 300V 52A TO3P |