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SXT21417CB38-26.000MT

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NTMFS5C646NLT1G

NTMFS5C646NLT1G

MOSFET N-CH 60V 19A 5DFN

MS27508E22B53AB

MS27508E22B53AB

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NTMFS5C646NLT1G

NTMFS5C646NLT1G

Image is for reference, please contact us to get the real picture

Part No :

NTMFS5C646NLT1G

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 60V 19A 5DFN
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11473 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 24 - Feb 28 2025
PDF
NTMFS5C646NLT1G PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:19A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:4.7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:33.7 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2164 pF @ 25 V
FET Feature:-
Power Dissipation (Max):3.7W (Ta), 79W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN
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