SNAP-IN HIGH CV 105C 6800UF 200V
MOSFET N-CH 30V 3.5A 6TSOP
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30 V |
Current - Continuous Drain (Id) @ 25°C: | 3.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 25mOhm @ 7A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 12 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 560 pF @ 24 V |
FET Feature: | - |
Power Dissipation (Max): | 500mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 6-TSOP |
Package / Case: | SOT-23-6 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IRF8010STRLPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 80A D2PAK |
|
AUIRFS8405TRLRochester Electronics |
MOSFET N-CH 40V 120A D2PAK |
|
HUFA75309P3Rochester Electronics |
MOSFET N-CH 55V 19A TO220-3 |
|
RQ6E030SPTRROHM Semiconductor |
MOSFET P-CH 30V 3A TSMT6 |
|
PMV27UPEARNexperia |
MOSFET P-CH 20V 4.5A TO236AB |
|
SIHG25N50E-GE3Vishay / Siliconix |
MOSFET N-CH 500V 26A TO247AC |
|
DMNH6008SCTQZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 130A TO220AB |
|
IRFSL5615PBFIR (Infineon Technologies) |
MOSFET N-CH 150V 33A TO262 |
|
FDB2570Rochester Electronics |
MOSFET N-CH 150V 22A TO263AB |
|
SKI04024Sanken Electric Co., Ltd. |
MOSFET N-CH 40V 85A TO263 |
|
TPH3206LDGBTransphorm |
GANFET N-CH 650V 16A PQFN |
|
NTD4804NA-35GRochester Electronics |
MOSFET N-CH 30V 14.5A/124A IPAK |
|
FDD6670A_NLRochester Electronics |
N-CHANNEL POWER MOSFET |