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IPB120N06S4H1ATMA2

IPB120N06S4H1ATMA2

MOSFET N-CH 60V 120A TO263-3

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IPB120N06S4H1ATMA2

IPB120N06S4H1ATMA2

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Part No :

IPB120N06S4H1ATMA2

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 60V 120A TO263-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10920 pieces
Shipped from
HK warehouse
Expected Shipping Date
Sep 26 - Sep 30 2024
PDF
IPB120N06S4H1ATMA2 PDF
Type Description
Series:Automotive, AEC-Q101, OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs:270 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:21900 pF @ 25 V
FET Feature:-
Power Dissipation (Max):250W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3-2
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPB120N06S4H1ATMA2 is available at GangBo-ic.com, Please review product page below for detailed information, including IPB120N06S4H1ATMA2 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPB120N06S4H1ATMA2 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

Office Hours : Mon-Fri, 9:00-18:30(GMT+8)

[email protected]

Phone: 00852-52612101

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