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NTD18N06T4G

NTD18N06T4G

MOSFET N-CH 60V 18A DPAK

NTD18N06T4G

NTD18N06T4G

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Part No :

NTD18N06T4G

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 60V 18A DPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11500 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 28 - Dec 02 2024
PDF
NTD18N06T4G PDF
Type Description
Series:-
Package:Bulk
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:18A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:60mOhm @ 9A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:30 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:710 pF @ 25 V
FET Feature:-
Power Dissipation (Max):2.1W (Ta), 55W (Tj)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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