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BSC061N08NS5ATMA1

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MOSFET N-CH 80V 82A TDSON

BSC061N08NS5ATMA1

BSC061N08NS5ATMA1

Image is for reference, please contact us to get the real picture

Part No :

BSC061N08NS5ATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 80V 82A TDSON
Catalog
Transistors - FETs, MOSFETs - Single
Availability
14531 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 28 - Dec 02 2024
PDF
BSC061N08NS5ATMA1 PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:82A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:6.1mOhm @ 41A, 10V
Vgs(th) (Max) @ Id:3.8V @ 41µA
Gate Charge (Qg) (Max) @ Vgs:33 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2500 pF @ 40 V
FET Feature:-
Power Dissipation (Max):2.5W (Ta), 74W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8-7
Package / Case:8-PowerTDFN
BSC061N08NS5ATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including BSC061N08NS5ATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for BSC061N08NS5ATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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