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BSB044N08NN3GXUMA1

BSB044N08NN3GXUMA1

MOSFET N-CH 80V 18A/90A 2WDSON

BSB044N08NN3GXUMA1

BSB044N08NN3GXUMA1

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Part No :

BSB044N08NN3GXUMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 80V 18A/90A 2WDSON
Catalog
Transistors - FETs, MOSFETs - Single
Availability
16258 pieces
Shipped from
HK warehouse
Expected Shipping Date
Sep 23 - Sep 27 2024
PDF
BSB044N08NN3GXUMA1 PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:18A (Ta), 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:3.5V @ 97µA
Gate Charge (Qg) (Max) @ Vgs:73 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5700 pF @ 40 V
FET Feature:-
Power Dissipation (Max):2.2W (Ta), 78W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:MG-WDSON-2, CanPAK M™
Package / Case:3-WDSON
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