MOSFET N-CH 30V 5.3A SOT23
RF SHIELD 2" X 2.75" T/H
Type | Description |
---|---|
Series: | HEXFET® |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30 V |
Current - Continuous Drain (Id) @ 25°C: | 5.3A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 27mOhm @ 5.2A, 10V |
Vgs(th) (Max) @ Id: | 2.3V @ 25µA |
Gate Charge (Qg) (Max) @ Vgs: | 2.6 nC @ 4.5 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 382 pF @ 15 V |
FET Feature: | - |
Power Dissipation (Max): | 1.3W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | Micro3™/SOT-23 |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
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