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FIXED IND 3.3UH 9.2A 10MOHM SMD

SISS27ADN-T1-GE3

SISS27ADN-T1-GE3

MOSFET P-CH 30V 50A PPAK1212-8S

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SISS27ADN-T1-GE3

SISS27ADN-T1-GE3

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Part No :

SISS27ADN-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET P-CH 30V 50A PPAK1212-8S
Catalog
Transistors - FETs, MOSFETs - Single
Availability
12859 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 14 - Nov 18 2024
PDF
SISS27ADN-T1-GE3 PDF
Type Description
Series:TrenchFET® Gen III
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:5.1mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:55 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4660 pF @ 15 V
FET Feature:-
Power Dissipation (Max):57W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® 1212-8S (3.3x3.3)
Package / Case:PowerPAK® 1212-8S
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