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FCP850N80Z

FCP850N80Z

POWER FIELD-EFFECT TRANSISTOR, N

FCP850N80Z

FCP850N80Z

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Part No :

FCP850N80Z

Manufacturer
Rochester Electronics
Description
POWER FIELD-EFFECT TRANSISTOR, N
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10025 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 18 - Nov 22 2024
PDF
FCP850N80Z PDF
Type Description
Series:SuperFET® II
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:850mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:4.5V @ 600µA
Gate Charge (Qg) (Max) @ Vgs:29 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1.315 pF @ 100 V
FET Feature:-
Power Dissipation (Max):136W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
FCP850N80Z is available at GangBo-ic.com, Please review product page below for detailed information, including FCP850N80Z price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FCP850N80Z to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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