MOSFET N-CH 900V 7A ITO220AB
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Not For New Designs |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 900 V |
Current - Continuous Drain (Id) @ 25°C: | 7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 1.9Ohm @ 3.5A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 49 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 1969 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 40.3W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | ITO-220AB |
Package / Case: | TO-220-3 Full Pack, Isolated Tab |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
RM80N80HDRectron USA |
MOSFET N-CHANNEL 80V 80A TO263-2 |
|
PSMN7R0-100BS,118Nexperia |
MOSFET N-CH 100V 100A D2PAK |
|
SI4430BDY-T1-E3Vishay / Siliconix |
MOSFET N-CH 30V 14A 8SO |
|
RSQ035N06HZGTRROHM Semiconductor |
MOSFET N-CH 60V 3.5A TSMT6 |
|
IPB80P03P4-05ATMA1Rochester Electronics |
P-CHANNEL POWER MOSFET |
|
PSMN2R4-30YLDXNexperia |
MOSFET N-CH 30V 100A LFPAK56 |
|
2SK3484-AZRenesas Electronics America |
MOSFET N-CH 100V 16A TO251 |
|
RD3G01BATTL1ROHM Semiconductor |
PCH -40V -15A POWER MOSFET - RD3 |
|
SIHG052N60EF-GE3Vishay / Siliconix |
MOSFET N-CH 600V 48A TO247AC |
|
IRLTS6342TRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 8.3A 6TSOP |
|
NVATS5A106PLZT4GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CHANNEL 40V 33A ATPAK |
|
IRF9Z14PBFVishay / Siliconix |
MOSFET P-CH 60V 6.7A TO220AB |
|
SIR182DP-T1-RE3Vishay / Siliconix |
MOSFET N-CH 60V 60A PPAK SO-8 |