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IRF5801TRPBF

IRF5801TRPBF

MOSFET N-CH 200V 600MA MICRO6

IRF5801TRPBF

IRF5801TRPBF

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Part No :

IRF5801TRPBF

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 200V 600MA MICRO6
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11301 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jan 25 - Jan 29 2025
PDF
IRF5801TRPBF PDF
Type Description
Series:HEXFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:600mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.2Ohm @ 360mA, 10V
Vgs(th) (Max) @ Id:5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:3.9 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:88 pF @ 25 V
FET Feature:-
Power Dissipation (Max):2W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:Micro6™(TSOP-6)
Package / Case:SOT-23-6 Thin, TSOT-23-6
IRF5801TRPBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRF5801TRPBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRF5801TRPBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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