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IPA90R800C3

IPA90R800C3

MOSFET N-CH 900V 6.9A TO220

IPA90R800C3

IPA90R800C3

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Part No :

IPA90R800C3

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 900V 6.9A TO220
Catalog
Transistors - FETs, MOSFETs - Single
Availability
256525 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 20 - Dec 24 2024
Type Description
Series:CoolMOS™
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):900 V
Current - Continuous Drain (Id) @ 25°C:6.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:800mOhm @ 4.1A, 10V
Vgs(th) (Max) @ Id:3.5V @ 460µA
Gate Charge (Qg) (Max) @ Vgs:42 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1100 pF @ 100 V
FET Feature:-
Power Dissipation (Max):33W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220 Full Pack
Package / Case:TO-220-3 Full Pack
IPA90R800C3 is available at GangBo-ic.com, Please review product page below for detailed information, including IPA90R800C3 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPA90R800C3 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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