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FQB8P10TM

FQB8P10TM

MOSFET P-CH 100V 8A D2PAK

FQB8P10TM

FQB8P10TM

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Part No :

FQB8P10TM

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET P-CH 100V 8A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
096509 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 20 - Dec 24 2024
PDF
FQB8P10TM PDF
Type Description
Series:QFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:530mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:470 pF @ 25 V
FET Feature:-
Power Dissipation (Max):3.75W (Ta), 65W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263AB)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
FQB8P10TM is available at GangBo-ic.com, Please review product page below for detailed information, including FQB8P10TM price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FQB8P10TM to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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