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SIRA18BDP-T1-GE3

SIRA18BDP-T1-GE3

MOSFET N-CH 30V 19A/40A PPAK SO8

SIRA18BDP-T1-GE3

SIRA18BDP-T1-GE3

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Part No :

SIRA18BDP-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 30V 19A/40A PPAK SO8
Catalog
Transistors - FETs, MOSFETs - Single
Availability
15760 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 19 - Dec 23 2024
Type Description
Series:TrenchFET® Gen IV
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:19A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6.83mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:19 nC @ 10 V
Vgs (Max):+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds:680 pF @ 15 V
FET Feature:-
Power Dissipation (Max):3.8W (Ta), 17W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® SO-8
Package / Case:PowerPAK® SO-8
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