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IPI086N10N3GXKSA1

IPI086N10N3GXKSA1

MOSFET N-CH 100V 80A TO262-3

IPI086N10N3GXKSA1

IPI086N10N3GXKSA1

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Part No :

IPI086N10N3GXKSA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 100V 80A TO262-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
196419 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 26 - Nov 30 2024
PDF
IPI086N10N3GXKSA1 PDF
Type Description
Series:OptiMOS™
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:8.6mOhm @ 73A, 10V
Vgs(th) (Max) @ Id:3.5V @ 75µA
Gate Charge (Qg) (Max) @ Vgs:55 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3980 pF @ 50 V
FET Feature:-
Power Dissipation (Max):125W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO262-3
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
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