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IPB147N03LGATMA1

IPB147N03LGATMA1

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IPB147N03LGATMA1

IPB147N03LGATMA1

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Part No :

IPB147N03LGATMA1

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 30V 20A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
18000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jul 24 - Jul 28 2025
PDF
IPB147N03LGATMA1 PDF
Type Description
Series:OptiMOS™
Package:Bulk
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:20A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:14.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:10 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1 pF @ 15 V
FET Feature:-
Power Dissipation (Max):31W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263AB)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPB147N03LGATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPB147N03LGATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPB147N03LGATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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