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BSZ105N04NSGATMA1

BSZ105N04NSGATMA1

OPTLMOS POWER-MOSFET

BSZ105N04NSGATMA1

BSZ105N04NSGATMA1

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Part No :

BSZ105N04NSGATMA1

Manufacturer
Rochester Electronics
Description
OPTLMOS POWER-MOSFET
Catalog
Transistors - FETs, MOSFETs - Single
Availability
066306 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 28 - Dec 02 2024
PDF
BSZ105N04NSGATMA1 PDF
Type Description
Series:OptiMOS™
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:11A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:10.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:4V @ 14µA
Gate Charge (Qg) (Max) @ Vgs:17 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1.3 pF @ 20 V
FET Feature:-
Power Dissipation (Max):2.1W (Ta), 35W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TSDSON-8
Package / Case:8-PowerTDFN
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