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FDT86113LZ

FDT86113LZ

MOSFET N-CH 100V 3.3A SOT223-4

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FDT86113LZ

FDT86113LZ

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Part No :

FDT86113LZ

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 100V 3.3A SOT223-4
Catalog
Transistors - FETs, MOSFETs - Single
Availability
390024000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 25 - Mar 01 2025
PDF
FDT86113LZ PDF
Type Description
Series:PowerTrench®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:3.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:100mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:6.8 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:315 pF @ 50 V
FET Feature:-
Power Dissipation (Max):2.2W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-223-4
Package / Case:TO-261-4, TO-261AA
FDT86113LZ is available at GangBo-ic.com, Please review product page below for detailed information, including FDT86113LZ price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FDT86113LZ to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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