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IPD14N06S280ATMA2

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IPD14N06S280ATMA2

IPD14N06S280ATMA2

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Part No :

IPD14N06S280ATMA2

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 55V 17A TO252-31
Catalog
Transistors - FETs, MOSFETs - Single
Availability
12413 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 13 - Nov 17 2024
PDF
IPD14N06S280ATMA2 PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:17A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:80mOhm @ 7A, 10V
Vgs(th) (Max) @ Id:4V @ 14µA
Gate Charge (Qg) (Max) @ Vgs:10 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:293 pF @ 25 V
FET Feature:-
Power Dissipation (Max):47W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3-11
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
IPD14N06S280ATMA2 is available at GangBo-ic.com, Please review product page below for detailed information, including IPD14N06S280ATMA2 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPD14N06S280ATMA2 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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