MOSFET N-CH 900V 9.2A TO247-3
Type | Description |
---|---|
Series: | SuperMESH™ |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 900 V |
Current - Continuous Drain (Id) @ 25°C: | 9.2A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 980mOhm @ 4.6A, 10V |
Vgs(th) (Max) @ Id: | 4.5V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: | 115 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 3000 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 200W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-247-3 |
Package / Case: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
![]() |
NTE2376NTE Electronics, Inc. |
MOSFET N-CHANNEL 200V 30A TO247 |
![]() |
IXFK80N50Q3Wickmann / Littelfuse |
MOSFET N-CH 500V 80A TO264AA |
![]() |
STB43N65M5STMicroelectronics |
MOSFET N-CH 650V 42A D2PAK |
![]() |
CMLDM8120G TR PBFREECentral Semiconductor |
MOSFET P-CH 20V 860MA SOT563 |
![]() |
TP65H070LSGTransphorm |
GANFET N-CH 650V 25A 3PQFN |
![]() |
IXTP12N50PWickmann / Littelfuse |
MOSFET N-CH 500V 12A TO220AB |
![]() |
SQA470EEJ-T1_GE3Vishay / Siliconix |
MOSFET N-CH 30V 2.25A PPAK SC70 |
![]() |
TK6R7P06PL,RQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CHANNEL 60V 46A DPAK |
![]() |
IXFK32N80Q3Wickmann / Littelfuse |
MOSFET N-CH 800V 32A TO264AA |
![]() |
SIR826ADP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 80V 60A PPAK SO-8 |
![]() |
IRF151Rochester Electronics |
N-CHANNEL POWER MOSFET |
![]() |
APT94N60L2C3GRoving Networks / Microchip Technology |
MOSFET N-CH 600V 94A 264 MAX |
![]() |
IRFR110ATMRochester Electronics |
N-CHANNEL POWER MOSFET |