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NVD5867NLT4G

NVD5867NLT4G

MOSFET N-CH 60V 6A/22A DPAK

NVD5867NLT4G

NVD5867NLT4G

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Part No :

NVD5867NLT4G

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 60V 6A/22A DPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
905790 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 18 - Nov 22 2024
PDF
NVD5867NLT4G PDF
Type Description
Series:Automotive, AEC-Q101
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:6A (Ta), 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:39mOhm @ 11A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:675 pF @ 25 V
FET Feature:-
Power Dissipation (Max):3.3W (Ta), 43W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK (SINGLE GAUGE)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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