MOSFET P-CH 30V 4A SOT-363
Type | Description |
---|---|
Series: | TrenchFET® |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30 V |
Current - Continuous Drain (Id) @ 25°C: | 4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 54mOhm @ 4.3A, 10V |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 28 nC @ 10 V |
Vgs (Max): | ±12V |
Input Capacitance (Ciss) (Max) @ Vds: | - |
FET Feature: | - |
Power Dissipation (Max): | 1.6W (Ta), 2.8W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SOT-363 |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
NTD4857NT4GRochester Electronics |
MOSFET N-CH 25V 12A/78A DPAK |
|
STW13N95K3STMicroelectronics |
MOSFET N-CH 950V 10A TO247-3 |
|
IPD90N04S3H4ATMA1Rochester Electronics |
OPTLMOS N-CHANNEL POWER MOSFET |
|
TK39A60W,S4VXToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 38.8A TO220SIS |
|
IXTH120P065TWickmann / Littelfuse |
MOSFET P-CH 65V 120A TO247 |
|
IRF7854TRPBFIR (Infineon Technologies) |
MOSFET N-CH 80V 10A 8SO |
|
SI3483CDV-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 8A 6TSOP |
|
APT60N60SCSG/TRRoving Networks / Microchip Technology |
MOSFET N-CH 600V 60A D3PAK |
|
IRFSL4310ZPBFRochester Electronics |
IRFSL4310 - HEXFET POWER MOSFET |
|
IXFT94N30P3Wickmann / Littelfuse |
MOSFET N-CH 300V 94A TO268 |
|
C3M0350120DWolfspeed - a Cree company |
SICFET N-CH 1200V 7.6A TO247-3 |
|
SPW16N50C3Rochester Electronics |
SPW16N50 - 500V COOLMOS N-CHANNE |
|
IPW60R099C7Rochester Electronics |
MOSFET N-CH 600V 22A TO247 |