MOSFET N-CH 600V 4.4A TO251-3
Type | Description |
---|---|
Series: | CoolMOS™ C6 |
Package: | Bulk |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 600 V |
Current - Continuous Drain (Id) @ 25°C: | 4.4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 950mOhm @ 1.5A, 10V |
Vgs(th) (Max) @ Id: | 3.5V @ 130µA |
Gate Charge (Qg) (Max) @ Vgs: | 13 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 280 pF @ 100 V |
FET Feature: | - |
Power Dissipation (Max): | 37W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | PG-TO251-3 |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IPP80R600P7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 800V 8A TO220-3 |
|
SI2325DS-T1-E3Vishay / Siliconix |
MOSFET P-CH 150V 530MA SOT23-3 |
|
R4008ANDTLROHM Semiconductor |
MOSFET N-CH 400V 8A CPT3 |
|
IRFR210TRLPBF-BE3Vishay / Siliconix |
MOSFET N-CH 200V 2.6A DPAK |
|
NTTFS4930NTAGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 4.5A/23A 8WDFN |
|
RSR015P03TLROHM Semiconductor |
MOSFET P-CH 30V 1.5A TSMT3 |
|
SI4124DY-T1-GE3Vishay / Siliconix |
MOSFET N-CH 40V 20.5A 8SO |
|
IRFP260PBFVishay / Siliconix |
MOSFET N-CH 200V 46A TO247-3 |
|
DMT43M8LFV-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 40V 87A POWERDI3333 |
|
DMT6009LFG-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 11A PWRDI3333 |
|
PSMN017-60YS,115Nexperia |
MOSFET N-CH 60V 44A LFPAK56 |
|
SUD23N06-31-GE3Vishay / Siliconix |
MOSFET N-CH 60V 21.4A TO252 |
|
IXFA6N120PWickmann / Littelfuse |
MOSFET N-CH 1200V 6A TO263 |