N-CHANNEL POWER MOSFET
Type | Description |
---|---|
Series: | * |
Package: | Bulk |
Part Status: | Active |
FET Type: | - |
Technology: | - |
Drain to Source Voltage (Vdss): | - |
Current - Continuous Drain (Id) @ 25°C: | - |
Drive Voltage (Max Rds On, Min Rds On): | - |
Rds On (Max) @ Id, Vgs: | - |
Vgs(th) (Max) @ Id: | - |
Gate Charge (Qg) (Max) @ Vgs: | - |
Vgs (Max): | - |
Input Capacitance (Ciss) (Max) @ Vds: | - |
FET Feature: | - |
Power Dissipation (Max): | - |
Operating Temperature: | - |
Mounting Type: | - |
Supplier Device Package: | - |
Package / Case: | - |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
BUK7M15-40HXNexperia |
MOSFET N-CH 40V 30A LFPAK33 |
|
UPA622TT-E1-ARochester Electronics |
MOSFET N-CH 30V 3A 6WSOF |
|
STN1NK80ZSTMicroelectronics |
MOSFET N-CH 800V 250MA SOT223 |
|
CPH3456-TL-WSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 20V 3.5A 3CPH |
|
FDD5670Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 2 |
|
NTD4806NAT4GRochester Electronics |
MOSFET N-CH 30V 11.3A/79A DPAK |
|
SI6415DQ-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 6.5A 8TSSOP |
|
TK60F10N1L,LXGQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 100V 60A TO220SM |
|
DMN10H220L-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 1.4A SOT23 |
|
FDD6N50TM-WSSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 6A DPAK |
|
STF6N80K5STMicroelectronics |
MOSFET N-CH 800V 4.5A TO220FP |
|
IRF7811AVPBFRochester Electronics |
MOSFET N-CH 30V 10.8A 8SO |
|
IRFH7914TRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 15A/35A 8PQFN |