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FDC658AP

FDC658AP

MOSFET P-CH 30V 4A SUPERSOT6

FDC658AP

FDC658AP

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Part No :

FDC658AP

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET P-CH 30V 4A SUPERSOT6
Catalog
Transistors - FETs, MOSFETs - Single
Availability
345534 pieces
Shipped from
HK warehouse
Expected Shipping Date
Sep 22 - Sep 26 2024
PDF
FDC658AP PDF
Type Description
Series:PowerTrench®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:4A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:50mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:8.1 nC @ 5 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:470 pF @ 15 V
FET Feature:-
Power Dissipation (Max):1.6W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SuperSOT™-6
Package / Case:SOT-23-6 Thin, TSOT-23-6
FDC658AP is available at GangBo-ic.com, Please review product page below for detailed information, including FDC658AP price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FDC658AP to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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