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MOSFET N-CH 300V 38A TO3PN

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FDA38N30

FDA38N30

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Part No :

FDA38N30

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 300V 38A TO3PN
Catalog
Transistors - FETs, MOSFETs - Single
Availability
225422 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 24 - Feb 28 2025
PDF
FDA38N30 PDF
Type Description
Series:UniFET™
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):300 V
Current - Continuous Drain (Id) @ 25°C:38A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:85mOhm @ 19A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:60 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:2600 pF @ 25 V
FET Feature:-
Power Dissipation (Max):312W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-3PN
Package / Case:TO-3P-3, SC-65-3
FDA38N30 is available at GangBo-ic.com, Please review product page below for detailed information, including FDA38N30 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FDA38N30 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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