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IAUC80N04S6N036ATMA1

IAUC80N04S6N036ATMA1

IAUC80N04S6N036ATMA1

IAUC80N04S6N036ATMA1

IAUC80N04S6N036ATMA1

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Part No :

IAUC80N04S6N036ATMA1

Manufacturer
IR (Infineon Technologies)
Description
IAUC80N04S6N036ATMA1
Catalog
Transistors - FETs, MOSFETs - Single
Availability
15000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Sep 29 - Oct 03 2024
Type Description
Series:Automotive, AEC-Q101, OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):7V, 10V
Rds On (Max) @ Id, Vgs:3.68mOhm @ 40A, 10V
Vgs(th) (Max) @ Id:3V @ 18µA
Gate Charge (Qg) (Max) @ Vgs:22 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1338 pF @ 25 V
FET Feature:-
Power Dissipation (Max):50W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8
Package / Case:8-PowerTDFN
IAUC80N04S6N036ATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IAUC80N04S6N036ATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IAUC80N04S6N036ATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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