MOSFET N-CH 30V 9.6A/58A IPAK
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30 V |
Current - Continuous Drain (Id) @ 25°C: | 9.6A (Ta), 58A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 11.5V |
Rds On (Max) @ Id, Vgs: | 9mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 15 nC @ 4.5 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2.155 pF @ 12 V |
FET Feature: | - |
Power Dissipation (Max): | 1.3W (Ta), 52W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | I-PAK |
Package / Case: | TO-251-3 Stub Leads, IPak |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
FDD8453LZ-F085Rochester Electronics |
MOSFET N-CH 40V 50A DPAK |
|
PMN27UN,135Rochester Electronics |
MOSFET N-CH 20V 5.7A 6TSOP |
|
SQR40020ER_GE3Vishay / Siliconix |
MOSFET N-CH 40V 100A TO252 REV |
|
NVMS5P02R2GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 3.95A 8SOIC |
|
BSS214NWH6327XTSA1IR (Infineon Technologies) |
MOSFET N-CH 20V 1.5A SOT323-3 |
|
IRF7820TRPBFIR (Infineon Technologies) |
MOSFET N CH 200V 3.7A 8-SO |
|
NTP2955GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 2.4A TO220AB |
|
IRFP340PBFVishay / Siliconix |
MOSFET N-CH 400V 11A TO247-3 |
|
BUK7E3R1-40E,127-NXPRochester Electronics |
PFET, 100A I(D), 40V, 0.0031OHM, |
|
IRFD9014PBFVishay / Siliconix |
MOSFET P-CH 60V 1.1A 4DIP |
|
NVMFS5C423NLWFAFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 31A/150A 5DFN |
|
DMP4013SPSQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 40V 11A PWRDI5060 |
|
SI2333DDS-T1-GE3Vishay / Siliconix |
MOSFET P-CH 12V 6A SOT23-3 |