MOSFET P-CH 80V 7.4A/46A PPAK
Type | Description |
---|---|
Series: | TrenchFET® Gen IV |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 80 V |
Current - Continuous Drain (Id) @ 25°C: | 7.4A (Ta), 46A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | - |
Rds On (Max) @ Id, Vgs: | 19.3mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: | 2.6V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 65 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 3420 pF @ 40 V |
FET Feature: | - |
Power Dissipation (Max): | 5W (Ta), 73.5W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PowerPAK® SO-8 |
Package / Case: | PowerPAK® SO-8 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IPP114N12N3GXKSA1IR (Infineon Technologies) |
MOSFET N-CH 120V 75A TO220-3 |
|
IXFH50N20Wickmann / Littelfuse |
MOSFET N-CH 200V 50A TO247AD |
|
IRFH8325TRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 21A/82A PQFN |
|
FQB6N50TMRochester Electronics |
MOSFET N-CH 500V 5.5A D2PAK |
|
R6012FNXROHM Semiconductor |
MOSFET N-CH 600V 12A TO220FM |
|
FDC604PSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 5.5A SUPERSOT6 |
|
SI3442BDV-T1-GE3Vishay / Siliconix |
MOSFET N-CH 20V 3A 6TSOP |
|
IRF8736TRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 18A 8SO |
|
BSP322PH6327XTSA1IR (Infineon Technologies) |
MOSFET P-CH 100V 1A SOT223-4 |
|
SIR670DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 60V 60A PPAK SO-8 |
|
TPCA8028-H(TE12LQMToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 50A 8SOP |
|
FQD9N25TM-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 250V 7.4A DPAK |
|
SSM3K16CT,L3FToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 20V 100MA CST3 |