MOSFET N-CH 60V 45A TO220-3
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60 V |
Current - Continuous Drain (Id) @ 25°C: | 45A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 28mOhm @ 45A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 150 nC @ 20 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2.05 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 131W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220-3 |
Package / Case: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
DMP1009UFDFQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 12V 11A 6UDFN |
|
BUK6D72-30EXNexperia |
MOSFET N-CH 30V 4A/11A 6DFN |
|
FQI17P10TURochester Electronics |
P-CHANNEL POWER MOSFET |
|
NTE2379NTE Electronics, Inc. |
MOSFET N-CHANNEL 600V 6.2A TO220 |
|
IPB80N06S208ATMA1Rochester Electronics |
MOSFET N-CH 55V 80A TO263-3-2 |
|
PSMN5R5-60YS,115Nexperia |
MOSFET N-CH 60V 100A LFPAK56 |
|
ECH8402-TL-ERochester Electronics |
MOSFET N-CH 30V 10A 8ECH |
|
NTMFS5C646NLT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 20A/93A 5DFN |
|
G2R1000MT17DGeneSiC Semiconductor |
SIC MOSFET N-CH 4A TO247-3 |
|
FQD8P10TMSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 100V 6.6A DPAK |
|
BSH205G2ARNexperia |
MOSFET P-CH 20V 2.6A TO236AB |
|
STB23NM50NSTMicroelectronics |
MOSFET N-CH 500V 17A D2PAK |
|
SCT3160KLHRC11ROHM Semiconductor |
SICFET N-CH 1200V 17A TO247N |