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FQB9N08TM

FQB9N08TM

MOSFET N-CH 80V 9.3A D2PAK

ERJ-S06D2803V

ERJ-S06D2803V

0805 ANTI-SULFUR RES. , 0.5%, 28

FQB9N08TM

FQB9N08TM

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Part No :

FQB9N08TM

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 80V 9.3A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
17169 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
FQB9N08TM PDF
Type Description
Series:QFET®
Package:Bulk
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:9.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:210mOhm @ 4.65A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:7.7 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:250 pF @ 25 V
FET Feature:-
Power Dissipation (Max):3.75W (Ta), 40W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263AB)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
FQB9N08TM is available at GangBo-ic.com, Please review product page below for detailed information, including FQB9N08TM price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FQB9N08TM to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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