MOSFET P-CH 20V 76A 8VSON
Type | Description |
---|---|
Series: | NexFET™ |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20 V |
Current - Continuous Drain (Id) @ 25°C: | 76A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: | 8.9mOhm @ 10A, 4.5V |
Vgs(th) (Max) @ Id: | 1.15V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 9.7 nC @ 4.5 V |
Vgs (Max): | ±12V |
Input Capacitance (Ciss) (Max) @ Vds: | 1790 pF @ 10 V |
FET Feature: | - |
Power Dissipation (Max): | 2.8W (Ta), 69W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-VSON (3.3x3.3) |
Package / Case: | 8-PowerVDFN |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
TK8P60W5,RVQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 8A DPAK |
|
AUIRF2804Rochester Electronics |
MOSFET N-CH 40V 195A TO220 |
|
FQA11N90Rochester Electronics |
MOSFET N-CH 900V 11.4A TO3P |
|
STB8NM60T4STMicroelectronics |
MOSFET N-CH 650V 8A D2PAK |
|
STP10N60M2STMicroelectronics |
MOSFET N-CH 600V 7.5A TO220 |
|
DMP2006UFG-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 17.5A POWERDI |
|
HUF75343S3SRochester Electronics |
MOSFET N-CH 55V 75A D2PAK |
|
FDP8441Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 23A/80A TO220-3 |
|
NTHS4101PT1GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 4.8A CHIPFET |
|
RFD14N05Rochester Electronics |
MOSFET N-CH 50V 14A IPAK |
|
XP161A1355PR-GTorex Semiconductor Ltd. |
MOSFET N-CH 20V 4A SOT89 |
|
IRF9640STRLPBFVishay / Siliconix |
MOSFET P-CH 200V 11A D2PAK |
|
IXTX17N120LWickmann / Littelfuse |
MOSFET N-CH 1200V 17A PLUS247-3 |