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STW58N65DM2AG

STW58N65DM2AG

MOSFET N-CH 650V 48A TO247

STW58N65DM2AG

STW58N65DM2AG

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Part No :

STW58N65DM2AG

Manufacturer
STMicroelectronics
Description
MOSFET N-CH 650V 48A TO247
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10577 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 29 - Dec 03 2024
PDF
STW58N65DM2AG PDF
Type Description
Series:Automotive, AEC-Q101, MDmesh™ DM2
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:48A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:65mOhm @ 24A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:88 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:4100 pF @ 100 V
FET Feature:-
Power Dissipation (Max):360W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247
Package / Case:TO-247-3
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