MOSFET N-CH 200V 220A TO264
Type | Description |
---|---|
Series: | HiPerFET™ |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 200 V |
Current - Continuous Drain (Id) @ 25°C: | 220A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 6.2mOhm @ 110A, 10V |
Vgs(th) (Max) @ Id: | 4.5V @ 4mA |
Gate Charge (Qg) (Max) @ Vgs: | 204 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 13600 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 960W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-264 |
Package / Case: | TO-264-3, TO-264AA |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
RTF016N05FRATLROHM Semiconductor |
MOSFET N-CH 45V 1.6A TUMT3 |
|
DMP3008SFG-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 8.6A PWRDI3333-8 |
|
SFW9Z24TMRochester Electronics |
P-CHANNEL POWER MOSFET |
|
NTD4960N-35GRochester Electronics |
MOSFET N-CH 30V 8.9A/55A IPAK |
|
NTD4808N-1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 10A/63A IPAK |
|
DMTH43M8LFG-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 40V PWRDI3333 |
|
AON6578Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 28A/70A 8DFN |
|
TK3A65D(STA4,Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 650V 3A TO220SIS |
|
SIHG065N60E-GE3Vishay / Siliconix |
MOSFET N-CH 600V 40A TO247AC |
|
MTD2N40ET4Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
STL60NH3LLSTMicroelectronics |
MOSFET N-CH 30V 30A POWERFLAT |
|
SI4435FDY-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 12.6A 8SOIC |
|
FDWS86368-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 80A POWER56 |