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BUZ30AHXKSA1

BUZ30AHXKSA1

PFET, 21A I(D), 200V, 0.13OHM, 1

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BUZ30AHXKSA1

BUZ30AHXKSA1

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Part No :

BUZ30AHXKSA1

Manufacturer
Rochester Electronics
Description
PFET, 21A I(D), 200V, 0.13OHM, 1
Catalog
Transistors - FETs, MOSFETs - Single
Availability
12071 pieces
Shipped from
HK warehouse
Expected Shipping Date
Sep 24 - Sep 28 2024
PDF
BUZ30AHXKSA1 PDF
Type Description
Series:SIPMOS®
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:21A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:130mOhm @ 13.5A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1.9 pF @ 25 V
FET Feature:-
Power Dissipation (Max):125W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3-1
Package / Case:TO-220-3
BUZ30AHXKSA1 is available at GangBo-ic.com, Please review product page below for detailed information, including BUZ30AHXKSA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for BUZ30AHXKSA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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