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SQ3419AEEV-T1_GE3

SQ3419AEEV-T1_GE3

MOSFET P-CHANNEL 40V 6.9A 6TSOP

SQ3419AEEV-T1_GE3

SQ3419AEEV-T1_GE3

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Part No :

SQ3419AEEV-T1_GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET P-CHANNEL 40V 6.9A 6TSOP
Catalog
Transistors - FETs, MOSFETs - Single
Availability
17387 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 13 - Nov 17 2024
PDF
SQ3419AEEV-T1_GE3 PDF
Type Description
Series:Automotive, AEC-Q101, TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:6.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:61mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:12.5 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:975 pF @ 20 V
FET Feature:-
Power Dissipation (Max):5W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-TSOP
Package / Case:SOT-23-6 Thin, TSOT-23-6
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