MOSFET N-CH 60V 20A TO220-3
SWITCH TOGGLE 3PDT 5A 120V
Type | Description |
---|---|
Series: | QFET® |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60 V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 60mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 15 nC @ 10 V |
Vgs (Max): | ±25V |
Input Capacitance (Ciss) (Max) @ Vds: | 590 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 53W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220-3 |
Package / Case: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
AON7400BAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 18A/40A 8DFN |
|
IPB320N20N3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 200V 34A D2PAK |
|
SIHG24N65EF-GE3Vishay / Siliconix |
MOSFET N-CH 650V 24A TO247AC |
|
PMZB1200UPEYLNexperia |
MOSFET P-CH 30V 410MA DFN1006B-3 |
|
FK3303010LPanasonic |
MOSFET N-CH 30V 100MA SSSMINI3 |
|
SIHG068N60EF-GE3Vishay / Siliconix |
MOSFET N-CH 600V 41A TO247AC |
|
IPP042N03LGRochester Electronics |
IPP042N03 - 12V-300V N-CHANNEL P |
|
STB16NF06LT4STMicroelectronics |
MOSFET N-CH 60V 16A D2PAK |
|
PSMN2R6-60PSQNexperia |
MOSFET N-CH 60V 150A TO220AB |
|
IRF1405ZSPBFRochester Electronics |
MOSFET N-CH 55V 75A TO263-3-2 |
|
TSM210N02CX RFGTSC (Taiwan Semiconductor) |
MOSFET N-CHANNEL 20V 6.7A SOT23 |
|
BSO040N03MSGXUMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 16A 8DSO |
|
PSMN3R2-40YLDXNexperia |
MOSFET N-CH 40V 120A LFPAK56 |