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IMBG120R350M1HXTMA1

IMBG120R350M1HXTMA1

TRANS SJT N-CH 1.2KV 4.7A TO263

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IMBG120R350M1HXTMA1

IMBG120R350M1HXTMA1

Image is for reference, please contact us to get the real picture

Part No :

IMBG120R350M1HXTMA1

Manufacturer
IR (Infineon Technologies)
Description
TRANS SJT N-CH 1.2KV 4.7A TO263
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10918 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 17 - Nov 21 2024
Type Description
Series:CoolSiC™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss):1.2 kV
Current - Continuous Drain (Id) @ 25°C:4.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:468mOhm @ 2A, 18V
Vgs(th) (Max) @ Id:5.7V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:5.9 nC @ 18 V
Vgs (Max):+18V, -15V
Input Capacitance (Ciss) (Max) @ Vds:196 pF @ 800 V
FET Feature:Standard
Power Dissipation (Max):65W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-7-12
Package / Case:TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
IMBG120R350M1HXTMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IMBG120R350M1HXTMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IMBG120R350M1HXTMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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