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IXTA1R6N100D2HV

IXTA1R6N100D2HV

MOSFET N-CH 1000V 1.6A TO263HV

IXTA1R6N100D2HV

IXTA1R6N100D2HV

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Part No :

IXTA1R6N100D2HV

Manufacturer
Wickmann / Littelfuse
Description
MOSFET N-CH 1000V 1.6A TO263HV
Catalog
Transistors - FETs, MOSFETs - Single
Availability
203920 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 25 - Nov 29 2024
PDF
IXTA1R6N100D2HV PDF
Type Description
Series:-
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1000 V
Current - Continuous Drain (Id) @ 25°C:1.6A (Tj)
Drive Voltage (Max Rds On, Min Rds On):0V
Rds On (Max) @ Id, Vgs:10Ohm @ 800mA, 0V
Vgs(th) (Max) @ Id:4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:27 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:645 pF @ 10 V
FET Feature:Depletion Mode
Power Dissipation (Max):100W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-263HV
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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