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SIRA22DP-T1-RE3

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MOSFET N-CH 25V 60A PPAK SO-8

SIRA22DP-T1-RE3

SIRA22DP-T1-RE3

Image is for reference, please contact us to get the real picture

Part No :

SIRA22DP-T1-RE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 25V 60A PPAK SO-8
Catalog
Transistors - FETs, MOSFETs - Single
Availability
043904 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 29 - Dec 03 2024
PDF
SIRA22DP-T1-RE3 PDF
Type Description
Series:TrenchFET® Gen IV
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:60A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:0.76mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:155 nC @ 10 V
Vgs (Max):+16V, -12V
Input Capacitance (Ciss) (Max) @ Vds:7570 pF @ 10 V
FET Feature:-
Power Dissipation (Max):83.3W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® SO-8
Package / Case:PowerPAK® SO-8
SIRA22DP-T1-RE3 is available at GangBo-ic.com, Please review product page below for detailed information, including SIRA22DP-T1-RE3 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for SIRA22DP-T1-RE3 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

Office Hours : Mon-Fri, 9:00-18:30(GMT+8)

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  • SIRA22DP-T1-RE3 Price
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