MOSFET P-CH 20V 680MA DFN1006B-3
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20 V |
Current - Continuous Drain (Id) @ 25°C: | 680mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: | 850mOhm @ 400mA, 4.5V |
Vgs(th) (Max) @ Id: | 1.3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 1.14 nC @ 4.5 V |
Vgs (Max): | ±8V |
Input Capacitance (Ciss) (Max) @ Vds: | 87 pF @ 10 V |
FET Feature: | - |
Power Dissipation (Max): | 360mW (Ta), 2.7W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | DFN1006B-3 |
Package / Case: | 3-XFDFN |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
AOT11N70Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 700V 11A TO220 |
|
SIR872DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 150V 53.7A PPAK SO-8 |
|
BSC090N03LSGATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 13A/48A TDSON |
|
IXFH50N60XWickmann / Littelfuse |
MOSFET N-CH 600V 50A TO247 |
|
IPB021N06N3GRochester Electronics |
N-CHANNEL POWER MOSFET |
|
FDD6688Rochester Electronics |
MOSFET N-CH 30V 84A DPAK |
|
IPB180P04P403ATMA1IR (Infineon Technologies) |
MOSFET P-CH 40V 180A TO263-7 |
|
NVMFS4C05NT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 24.7A/116A 5DFN |
|
TSM033NA04LCR RLGTSC (Taiwan Semiconductor) |
MOSFET N-CH 40V 141A 8PDFN |
|
IRFU9310PBFVishay / Siliconix |
MOSFET P-CH 400V 1.8A TO251AA |
|
SI2304BDS-T1-E3Vishay / Siliconix |
MOSFET N-CH 30V 2.6A SOT23-3 |
|
AUIRF1405ZLRochester Electronics |
MOSFET N-CH 55V 150A TO262 |
|
IXTH26N60PWickmann / Littelfuse |
MOSFET N-CH 600V 26A TO247 |