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IPB45P03P4L11ATMA1

IPB45P03P4L11ATMA1

MOSFET P-CH 30V 45A TO263-3-2

IPB45P03P4L11ATMA1

IPB45P03P4L11ATMA1

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Part No :

IPB45P03P4L11ATMA1

Manufacturer
Rochester Electronics
Description
MOSFET P-CH 30V 45A TO263-3-2
Catalog
Transistors - FETs, MOSFETs - Single
Availability
513851 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 29 - Dec 03 2024
PDF
IPB45P03P4L11ATMA1 PDF
Type Description
Series:Automotive, AEC-Q101, OptiMOS™
Package:Bulk
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:45A (Tc)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:11.1mOhm @ 45A, 10V
Vgs(th) (Max) @ Id:2V @ 85µA
Gate Charge (Qg) (Max) @ Vgs:55 nC @ 10 V
Vgs (Max):+5V, -16V
Input Capacitance (Ciss) (Max) @ Vds:3770 pF @ 25 V
FET Feature:-
Power Dissipation (Max):58W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3-2
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPB45P03P4L11ATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPB45P03P4L11ATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPB45P03P4L11ATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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