MOSFET N-CH 105V 40A TO252
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 105 V |
Current - Continuous Drain (Id) @ 25°C: | 40A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Rds On (Max) @ Id, Vgs: | 28mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 46 nC @ 10 V |
Vgs (Max): | ±25V |
Input Capacitance (Ciss) (Max) @ Vds: | 2445 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 2.3W (Ta), 100W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-252, (D-Pak) |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IRFIZ48NPBFRochester Electronics |
HEXFET POWER MOSFET |
|
NTMFS4955NT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 9.7A/48A 5DFN |
|
TPHR7904PB,L1XHQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 40V 150A 8SOP |
|
IRL3803SPBFRochester Electronics |
HEXFET POWER MOSFET |
|
NTLUS3A18PZTCGSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 5.1A 6UDFN |
|
ZXMN10A08E6TAZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 1.5A SOT26 |
|
ECH8308-TL-HSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 12V 10A 8ECH |
|
FQB5N90TMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 900V 5.4A D2PAK |
|
IPN60R360PFD7SATMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 10A SOT223 |
|
RJ1G08CGNTLLROHM Semiconductor |
MOSFET N-CH 40V 80A LPTL |
|
IPP60R125C6XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 30A TO220-3 |
|
IPP085N06LGINRochester Electronics |
N-CHANNEL POWER MOSFET |
|
SSM6K361NU,LFToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 100V 3.5A 6UDFNB |