MOSFET N-CH 200V 18A TO220F
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 200 V |
Current - Continuous Drain (Id) @ 25°C: | 18A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 175mOhm @ 9A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | - |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 850 pF @ 10 V |
FET Feature: | - |
Power Dissipation (Max): | 35W (Tc) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220F |
Package / Case: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
FQB55N06TMRochester Electronics |
MOSFET N-CH 60V 55A D2PAK |
|
PSMN3R4-30PL,127Nexperia |
MOSFET N-CH 30V 100A TO220AB |
|
CEDM7004 TR PBFREECentral Semiconductor |
MOSFET N-CH 30V 1.78A SOT883 |
|
BUK6507-55C,127Rochester Electronics |
PFET, 100A I(D), 55V, 0.0105OHM, |
|
IPP80N06S2L06AKSA1Rochester Electronics |
MOSFET N-CH 55V 80A TO220-3 |
|
SIHB22N60ET5-GE3Vishay / Siliconix |
MOSFET N-CH 600V 21A TO263 |
|
SI4434DY-T1-E3Vishay / Siliconix |
MOSFET N-CH 250V 2.1A 8SO |
|
IXFX170N20TWickmann / Littelfuse |
MOSFET N-CH 200V 170A PLUS247-3 |
|
BSS84LT7GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 50V 130MA SOT23-3 |
|
AONS21321Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 30V 14A/24A 8DFN |
|
FDMS86200DCSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 150V 9.3A DLCOOL56 |
|
FDBL86561-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 300A 8HPSOF |
|
NVE4153NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 20V 915MA SC89 |