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IPB120P04P404ATMA2

IPB120P04P404ATMA2

MOSFET P-CH 40V 120A TO263-3

IPB120P04P404ATMA2

IPB120P04P404ATMA2

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Part No :

IPB120P04P404ATMA2

Manufacturer
IR (Infineon Technologies)
Description
MOSFET P-CH 40V 120A TO263-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
12916 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 03 - Feb 07 2025
Type Description
Series:Automotive, AEC-Q101, OptiMOS®-P2
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:3.8mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:4V @ 340µA
Gate Charge (Qg) (Max) @ Vgs:205 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:14790 pF @ 25 V
FET Feature:-
Power Dissipation (Max):136W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3-2
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPB120P04P404ATMA2 is available at GangBo-ic.com, Please review product page below for detailed information, including IPB120P04P404ATMA2 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPB120P04P404ATMA2 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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