MOSFET N-CH 30V 5.2A SUPERSOT6
3PH DELTA MULTI-STAGE HIGH CURRE
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30 V |
Current - Continuous Drain (Id) @ 25°C: | 5.2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs: | 42mOhm @ 5.2A, 4.5V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 16 nC @ 4.5 V |
Vgs (Max): | ±8V |
Input Capacitance (Ciss) (Max) @ Vds: | 538 pF @ 10 V |
FET Feature: | - |
Power Dissipation (Max): | 1.6W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SuperSOT™-6 |
Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
2N7002-7-FZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 115MA SOT23-3 |
|
IRFBC40LCPBFVishay / Siliconix |
MOSFET N-CH 600V 6.2A TO220AB |
|
PMPB48EP,115Rochester Electronics |
MOSFET P-CH 30V 4.7A DFN2020MD-6 |
|
FDS6690SRochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
FJ4B01110L1Panasonic |
MOSFET P-CH 12V 1.4A ALGA004 |
|
SI7862ADP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 16V 18A PPAK SO-8 |
|
NDDP010N25AZ-1HRochester Electronics |
NDDP010N25AZ-1H |
|
IRF540NLPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 33A TO262 |
|
BSZ036NE2LSATMA1IR (Infineon Technologies) |
MOSFET N-CH 25V 16A/40A TSDSON |
|
IPI60R250CPRochester Electronics |
COOLMOS N-CHANNEL POWER MOSFET |
|
FQA90N15Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 150V 90A TO3PN |
|
STU7N80K5STMicroelectronics |
MOSFET N-CH 800V 6A IPAK |
|
NTMFS5C604NLT1G-UIL3Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 40A/287A 5DFN |