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TPN1600ANH,L1Q

TPN1600ANH,L1Q

MOSFET N CH 100V 17A 8TSON-ADV

TPN1600ANH,L1Q

TPN1600ANH,L1Q

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Part No :

TPN1600ANH,L1Q

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
MOSFET N CH 100V 17A 8TSON-ADV
Catalog
Transistors - FETs, MOSFETs - Single
Availability
503250 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 17 - Nov 21 2024
PDF
TPN1600ANH,L1Q PDF
Type Description
Series:U-MOSVIII-H
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:17A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:16mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id:4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs:19 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1600 pF @ 50 V
FET Feature:-
Power Dissipation (Max):700mW (Ta), 42W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-TSON Advance (3.3x3.3)
Package / Case:8-PowerVDFN
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